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View rej03g0474 rjk2009dpm detailed specification:

Preliminary Datasheet RJK2009DPM REJ03G0474-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS 30 V Drain current ID 40 A Drain peak current ID (pulse)Note1 160 A Body-drain diode reverse drain current IDR 40 A Body-drain diode reverse drain peak current IDR (pulse)Note1 160 A Avalanche current IAPNote3 40 A Avalanche energy EARNote3 106 mJ Channel dissipation Pch Note2 60 W Channel to case thermal impedance ch-c 2.08 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150... See More ⇒

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