View rjk005n03 datasheet:

RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol KV Packaging specifications and hFE Inner circuit (3) Package Taping Type Code T146 Basic ordering unit (pieces) 3000 RJK005N03 (2) 2 (1) Source 1 (2) Gate (3) Drain (1) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage V 12 V GSS Continuous I 500 mA D Drain current 1 Pulsed I 2.0 A DP Source current Continuous I 200 mA S (Body Diode) 1 Pulsed I 800 mA S... See More ⇒

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