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View bc237 bc238 bc239 detailed specification:

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Emitter Voltage VCES V BC237 50 V BC238/239 30 Collector-Emitter Voltage VCEO BC237 45 V BC238/239 25 V Emitter-Base Voltage VEBO BC237 6 V BC238/239 5 V Collector Current (DC) IC 100 mA Collector Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 150 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 BC237 45 V BC238/239 25 V Emitter Base Breakdown Voltage BVEBO IE=1 , IC=0 BC237 6 V V BC238/239 5 Collector Cut-off Current ICES VCE=50V, IB=0 15 nA BC237 0.2 VCE=30V, IB=0 15 BC238/239 0.2 nA 800 ... See More ⇒

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