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View 2sj193 detailed specification:

Ordering number EN3766 P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ193] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 15 V Drain Current (DC) ID 1 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 4 A Tc=25 C 3.5 W Allowable Power Dissipation PD Mounted on ceramic board (250mm2 0.8mm) 1.5 W C Channel Temperature Tch 150 Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Vo... See More ⇒

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