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Ordering number ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions High-frequency low-noise amplifier applications. unit mm 2019B Features [2SK1961] 5.0 Adoption of FBET process. 4.0 4.0 Large yfs . Small Ciss. Ultralow noise figure. 0.45 0.5 0.44 0.45 1 Source 2 Gate 3 Drain 1 2 3 SANYO NP JEDEC TO-92 1.3 1.3 EIAJ SC-43 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 15 V Gate-to-Drain Voltage VGDS 15 V Gate Current IG 10 mA Drain Current ID 100 mA Allowable Power Dissipation PD 500 mW Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Gate... See More ⇒

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