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Ordering number ENA0747A 2SK4125 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4125 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 17 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 52 A 2.5 W Allowable Power Dissipation PD Tc=25 C (SANYO s ideal heat dissipation condition)*1 170 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *2 EAS 86.5 mJ Avalanche Current *3 IAV 17 A *1 SANYO s condition is radiation from backside. The method ... See More ⇒

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