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View s8050t detailed specification:

s8050ts8050t

S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current IC = 0.5 A 1 2 3 2.54 0.1 1 Emitter 2 Base 3 Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V mA Collector Currrent IC 500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 +150 ELECTRICAL CHARACTERISTICS (TAMB = 25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO 40 - - V IC = 100 A, IE = 0 Collector-emitter Breakdown V... See More ⇒

 

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 s8050t.pdf Design, MOSFET, Power

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