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View std7n60m2 stp7n60m2 stu7n60m2 detailed specification:

STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 TJmax max 1 STD7N60M2 DPAK STP7N60M2 650 V 0.95 5 A TAB STU7N60M2 TAB Extremely low gate charge 3 3 2 Lower RDS(on) x area vs previous generation 2 1 1 Low gate input resistance TO-220 IPAK 100% avalanche tested Zener-protected Figure 1. Internal schematic diagram , TAB Applications Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They... See More ⇒

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