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View 2sj167 detailed specification:

2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs Low on resistance R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK1061 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS 20 V DC ID -200 Drain current mA Pulse IDP -800 JEDEC Drain power dissipation (Ta = 25 C) PD 300 mW JEITA Channel temperature Tch 150 C TOSHIBA 2-4E1E Storage temperature range Tstg -55 150 C Weight 0.13 g (typ.) 1 2003-03-25 2SJ167 Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbol Test Conditio... See More ⇒

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