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View 2sj312 detailed specification:

2SJ312 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSIV) 2SJ312 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 80 m (typ.) DS (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode V = -0.8 -2.0 V (V = -10 V, I = -1 mA) th DS D Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Drain-gate voltage (RGS = 20 k ) VDGR -60 V Gate-source voltage VGSS 20 V DC (Note 1) ID -14 Drain current A Pulse (Note 1) IDP -56 Drain power dissipation (Tc = 25 C) PD 40 W JEDEC Channel temperature Tch 150 C JEITA Storage temperature range Tstg -55 150 C TOSHIBA 2-10S1B Weight 1.5 g (typ.) Thermal Chara... See More ⇒

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