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View 2sj338 detailed specification:

2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 0.7 S (typ.) fs Complementary to 2SK2162 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Drain current (Note 1) ID -1 A Power dissipation (Tc = 25 C) PD 20 W Channel temperature Tch 150 C Storage temperature range Tstg -55 150 C Note 1 Please use devices on condition that the channel temperature is JEDEC below 150 C. JEITA SC-64 TOSHIBA 2-7B1B Marking Weight 0.36 g (typ.) JEDEC JEITA SC-64 TOSHIBA 2-7J1B Weight 0.36 g (typ.) 1 2002-06-27 2SJ338 Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ... See More ⇒

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