View 2sj465 detailed specification:
2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 2.5 V gate drive Low drain-source ON resistance R = 0.54 (typ.) DS (ON) High forward transfer admittance Y = 1.7 S (typ.) fs Low leakage current I = -100 A (max) DSS (V = -16 V) DS Enhancement-mode Vth = -0.5 -1.1 V (V = -10 V, I = -200 A) DS D Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -16 V Drain-gate voltage (RGS = 20 k ) VDGR -16 V Gate-source voltage VGSS 8 V DC (Note 1) ID -2 JEDEC Drain current A Pulse (Note 1) IDP -6 JEITA Drain power dissipation PD 0.5 W TOSHIBA 2-5K1B Drain power dissipation (Note 2) PD 1.5 W Weight 0.05 g (typ.) Channel temperature Tch 150 C Storage temperat... See More ⇒
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