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2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4016 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.33 (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k ) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 13 Drain current A Pulse (t = 1 ms) 1 Gate IDP 52 (Note 1) 2 Drain 3 Source Drain power dissipation (Tc = 25 C) PD 50 W Single-pulse avalanche energy EAS 1033 mJ JEDEC (Note 2) Avalanche current IAR 13 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 5.0 mJ TOS... See More ⇒

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