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TK5P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5P53D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.8 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) 1.14MAX 2.29 Characteristics Symbol Rating Unit 0.76 0.12 Drain-source voltage VDSS 525 V Gate-source voltage VGSS 30 V DC (Note 1) ID 5 1 2 3 Drain current A Pulse (t = 1 ms) IDP 20 1. GATE (Note 1) 2. DRAIN HEAT SINK Drain power dissipation (Tc = 25 C) PD 80 W 3. SOURCE Single pulse avalanche energy EAS 142 mJ (Note 2) JEDEC Avalanche current (Note 3) IAR 5 A JEITA Rep... See More ⇒

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