View qm2607c1 detailed specification:
QM2607C1 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2607C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 115m 1.3 A charge for most of the small power switching and -20V 255m -0.94 A load switch applications. The QM2607C1 meet the RoHS and Green Applications Product requirement with full function reliability approved. High Frequency Point-of-Load Synchronous s Features Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Advanced high cell density Trench technology Load Switch Super Low Gate Charge Excellent Cdv/dt effect decline SOT363 (SC-70-6L ) Pin Configuration Green Device Available Absolute Maximum Ratings Rating Symbol Parameter Units N-Channel P-Channel VDS... See More ⇒
Keywords - ALL TRANSISTORS SPECS
qm2607c1.pdf Design, MOSFET, Power
qm2607c1.pdf RoHS Compliant, Service, Triacs, Semiconductor
qm2607c1.pdf Database, Innovation, IC, Electricity
