View ut3406 detailed specification:
UNISONIC TECHNOLOGIES CO., LTD UT3406 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications. FEATURES * VDS (V) = 30V * ID = 3.6A (VGS = 10V) * RDS(ON) ... See More ⇒
Keywords - ALL TRANSISTORS SPECS
ut3406.pdf Design, MOSFET, Power
ut3406.pdf RoHS Compliant, Service, Triacs, Semiconductor
ut3406.pdf Database, Innovation, IC, Electricity
