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View 2sd1265 detailed specification:

2SD1265 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150 Storage Temperature Tstg -50 150 ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= 150V , IE=0 10 A Emitter Cutoff Current IEBO VEB= 5V , IC=0 10 A DC Current Gain hFE1 VCE= 3.0V ,IC=-1.0A 70 240 Collector- Emitter Saturation Voltage VCE(sat) IC=3A ,IB=-0.3mA 1.0 V Current Gain Bandwidth Product fT VCE= -10V ,IC=-0.5A 60 MHZ Wing Shing Computer Compo... See More ⇒

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