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View 12n60 12n60f datasheet:

12n60_12n60f12n60_12n60f

GOFORD12N60/12N60F600V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS600V 0.65 12Atechnology.This advanced technology hasbeen especially tailored tominimize on-stateresistance, provide superior switchingperformance, and withstand high energypulse in the avalanche and commutationmode. These devices are well suited for highefficiency switched mode power supplies,active power factor correction based on halfbridge topology.Features12A, 600V, RDS(on) = 0.65 @VGS = 10 V Ordering Information Low gate charge ( typical 52nC)PACKAGE BRANDPART NUMBER Fast switching 100% avalanche testedTO-220/220F 0GFD12N60/12N60F Improved dv/dt capabilityHTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 Page 1GOFORD12N60/12N60FAbsolute Maximum Rating

 

Keywords - ALL TRANSISTORS DATASHEET

 12n60 12n60f.pdf Design, MOSFET, Power

 12n60 12n60f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 12n60 12n60f.pdf Database, Innovation, IC, Electricity

 

 
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