All Transistors. Datasheet

 

View 2301h datasheet:

2301h2301h

GOFORD 2301HDESCRIPTION D2The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G2voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S2GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-4.5V -10V (Typ)m m -2-30V 105 65 A2301H High Power and current handing capability Marking and pin Assignment Lead free product is acquired Surface Mount Package Application PWM applications Load switch SOT-23 Power management Absolute Maximum Ratings (TA=25unless otherwise noted) Parameter Symbol Limit UnitDrain-Source Voltage -30 VVDS Gate-Source Voltage 12 VVGS Drain Current-Continuous -2 AI DDrain Current -Pulsed (Note 1) -10 AI DMMaximum Power Dissipation 1 WP

 

Keywords - ALL TRANSISTORS DATASHEET

 2301h.pdf Design, MOSFET, Power

 2301h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2301h.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.