View 2n2604 2n2605 datasheet:

TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level JAN, JANTX 2N2604 2N2605 JANTXV MAXIMUM RATINGS Ratings Symbol 2N2604 2N2605 Units Collector-Base Voltage 80 70 Vdc VCBO Collector-Emitter Voltage 60 Vdc VCEO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 30 mAdc IC Total Power Dissipation @ TA = +250C(1) PT 400 mW/0C 0Operating & Storage Junction Temperature Range -65 to +200 C TJ, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit TO-46* 0Thermal Resistance, Junction-to-Case 0.437 C/mW RJC (TO-206AB) 1) Derate linearly 2.28 mW/0C above T = +250C A*See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage 80

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