All Transistors. Datasheet

 

View 2n2608 datasheet:

2n2608

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/295 Devices Qualified Level 2N2608 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS(1)Power Dissipation T = +250C P 300 mW A D0Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 C (1) Derate linearly 1.71 mW/0C for T > +250C. TO-18 A(TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (T = +250C unless otherwise noted) APARAMETERS / TEST CONDITIONS Symbol Min. Max. Units Gate-Source Breakdown Voltage V = 0, I = 1.0 Adc V 30 Vdc DS G (BR)GSSGate Reverse Current V = 0, V = 30 Vdc I 10 Adc DS GS GSS V = 0, V = 15 Vdc 7.5 DS GSDrain Current V = 0, V = 5.0 Vdc I -1.0 -5.0 mAdc GS DS DDSSGate-Source Cutoff Voltage V = 5.

 

Keywords - ALL TRANSISTORS DATASHEET

 2n2608.pdf Design, MOSFET, Power

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