View 2n3820 datasheet:

2N3820P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage -20 VVGS Gate-Source Voltage 20 VIGF Forward Gate Current 10 mATSTG Storage Temperature Range -55 ~ 150 C* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These rating are based on a maximum junction temperature of 150 degrees C.2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Electrical Characteristics TC=25C unless otherwise noted Symbol Par

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