All Transistors. Datasheet

 

View 2n3868 datasheet:

2n38682n3868

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3868APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency AmplifiersFEATURES:Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 60 Vdc (Min)Transistors DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturation Voltage:VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)DESCRIPTION:DESCRIPTION:These power transistors are produced by PPC's DOUBLE DIFFUSEDPLANAR process. This technology produces high voltage deviceswith excellent switching speeds, frequency response, gain linearity,saturation voltages, high current gain, and safe operating areas.They are intended for use in Commercial, Industrial, and Militarypower switchi

 

Keywords - ALL TRANSISTORS DATASHEET

 2n3868.pdf Design, MOSFET, Power

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