View 2n4351 datasheet:

2N4351 N-CHANNEL MOSFET Linear Integrated Systems ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA TO-72HIGH GAIN gfs = 1000S BOTTOM VIEWABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) G 2 3 DMaximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature -55 to +150 C 1 4S CMaximum Power Dissipation Continuous Power Dissipation 375mW Maximum Current Drain to Source 100mA Maximum Voltages * Body tied to Case. Drain to Body 25V Drain to Source 25V Peak Gate to Source2 125VELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS BVDSS Drain to Source Breakdown Voltage 25 ID = 10A, VGS = 0V VDS(on) Drain to Source "On" Voltage 1 V ID = 2mA, VGS = 10

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