View 2n5430 datasheet:

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 6 V EBOI Collector Current-Continuous 7 A CI Base Current-Continuous 1 A BP Collector Power Dissipation@T =25 40 W C CT Junction Temperature 200 JStorage Temperature -65~200 Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.37 /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Pro

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