View 2n5457re datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5457/DJFETs General Purpose2N5457NChannel Depletion1 DRAIN*Motorola Preferred Device3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit123DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcCASE 2904, STYLE 5Reverse GateSource Voltage VGSR 25 VdcTO92 (TO226AA)Gate Current IG 10 mAdcTotal Device Dissipation @ TA = 25C PD 310 mWDerate above 25C 2.82 mW/CJunction Temperature Range TJ 125 CStorage Channel Temperature Range Tstg 65 to +150 CELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)Characteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSGateSource Breakdown Voltage V(BR)GSS 25 Vdc(IG = 10 Adc, VDS = 0)Gate Reverse Current IGSS nAdc(VGS = 15 Vdc, VDS = 0) 1.0(VGS =

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