View 2n5551 datasheet:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551TO- 92CBECBEHigh Voltage NPN Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 160 VCollector -Base Voltage VCBO 180 VEmitter -Base Voltage VEBO 6.0 VCollector Current Continuous IC 600 mAPower Dissipation @Ta=25 degC PD 625 mWDerate Above 25 deg C 5.0 mw/deg CPower Dissipation @Tc=25 degC PD 1.5 WDerate Above 25 deg C 12 mw/deg COperating And Storage Junction Tj, Tstg -55 to +150 deg CTemperature RangeTHERMAL RESISTANCEJunction to Case Rth(j-c) 125 deg C/WJunction to Ambient Rth(j-a) (1) 357 deg C/W(1) Rth (j-a) is measured with the device soldered into a typica

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