View 2n5551 datasheet:

2N5551NPN Silicon Elektronische BauelementeGeneral Purpose Transistor RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-924.550.2 3.50.2FEATURES* Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.080.0746+0.10. 0.1(1.27 Typ.)1: Emitter+0.21.250.22: Base1 2 33: Collector2.540.1MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Para meter Value UnitsVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Dissipation 0.625 W TJ, Tstg Junction and Storage Temperature -55-150 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Test conditions MIN TYP MAX UNITSymbol Collector-base breakdown voltage V(B

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