All Transistors. Datasheet

 

View 2n5551 mmbt5551 datasheet:

2n5551_mmbt55512n5551_mmbt5551

June 20092N5551 / MMBT5551NPN General Purpose AmplifierFeatures This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT555132TO-92SOT-231Marking: 3S 1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Voltage 6.0 VIC Collector current - Continuous 600 mATJ, Tstg Junction and Storage Temperature -55 to +150 C* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1. These ratings are based on

 

Keywords - ALL TRANSISTORS DATASHEET

 2n5551 mmbt5551.pdf Design, MOSFET, Power

 2n5551 mmbt5551.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5551 mmbt5551.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.