View 2n5551c datasheet:

SEMICONDUCTOR 2N5551CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=180V, VCEO=160VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=50nA(Max.), VCB=120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=0.2V(Max.), IC=50mA, IB=5mAH 0.45_Low Noise : NF=8dB (Max.) HJ 14.00 + 0.50K 0.55 MAXF FL 2.30M 0.45 MAXN 1.001 2 3MAXIMUM RATING (Ta=25 ) 1. EMITTER2. COLLECTOR3. BASECHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 180 VVCEOCollector-Emitter Voltage 160 VTO-92VEBOEmitter-Base Voltage 6 VICCollector Current 600 mAIBBase Current 100 mAPCCollector Power Dissipation 625 mWTjJunction Temperature 150Tstg -55 150Storage Temperature Range

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