View 2n5551s datasheet:

SEMICONDUCTOR 2N5551STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES _+A 2.93 0.20B 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=180V, VCEO=160V 3 D 0.40+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=50nA(Max.) VCB=120VJ 0.13+0.10/-0.05K 0.00 ~ 0.10Low Saturation VoltageQL 0.55P P: VCE(sat)=0.2V(Max.) IC=50mA, IB=5mAM 0.20 MINN 1.00+0.20/-0.10Low Noise : NF=8dB (Max.)P 7Q 0.1 MAXM1. EMITTER2. BASEMAXIMUM RATING (Ta=25)3. COLLECTORCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 180 VVCEOCollector-Emitter Voltage 160 VSOT-23VEBOEmitter-Base Voltage 6 VICCollector Current 600 mAIBBase Current 100 mAPC *Collector Power Dissipation 350 mWTj

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