View 2n5954 2n5955 2n5956 datasheet:
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area Complement to type 2N6372 2N6373 2N6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N5954 90VCBO Collector-base voltage 2N5955 Open emitter 70 V 2N5956 50 2N5954 80VCEO Collector-emitter voltage 2N5955 Open base 60 V 2N5956 40 VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 2 A PD Total Power Dissipation TC=25 40 WTj Junction temperature 150 Tstg Storage temperature -65~200 THERMAL CHA
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2n5954 2n5955 2n5956.pdf Design, MOSFET, Power
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