View 2n6106 2n6108 2n6110 datasheet:

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N6106 -40VCBO Collector-base voltage 2N6108 Open emitter -60 V 2N6110 -80 2N6106 -30VCEO Collector-emitter voltage 2N6108 Open base -50 V 2N6110 -70 VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A ICM Collector current-peak -10 A IB Base current -3 A PT Total power dissipation TC=25 40 WTj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETE

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 2n6106 2n6108 2n6110.pdf Design, MOSFET, Power

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