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2n6786

2N6786Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34)9.40 (0.37)8.01 (0.315) in a 9.01 (0.355)Hermetically sealed TO39 4.06 (0.16)4.57 (0.18)Metal Package. 0.89 max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.N-Channel MOSFET. 5.08 (0.200)typ.VDSS = 400V 2.54ID = 1.25A 2(0.100)1 30.74 (0.029)RDS(ON) = 3.6 1.14 (0.045)0.71 (0.028)0.53 (0.021)All Semelab hermetically sealed products can be processed in accordance with the requirements 45of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO39 (TO205AF) PINOUTS 1 Source 2 Gate 3 - Drain Parameter Min. Typ. Max. UnitsVDSS Drain Source Breakdown Voltage 400 V ID Continuous Drain Current 1.25 A PD Power Dissipation 15 WRDS(ON) Static Drain Source OnState Resistance 3.6 CISS Input Ca

 

Keywords - ALL TRANSISTORS DATASHEET

 2n6786.pdf Design, MOSFET, Power

 2n6786.pdf RoHS Compliant, Service, Triacs, Semiconductor

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