View 2n7000-03 datasheet:

2N7000N-channel enhancement mode field-effect transistorRev. 03 19 May 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:2N7000 in SOT54 (TO-92 variant).2. Features TrenchMOS technology Very fast switching Logic level compatible.3. Applications Relay driver High speed line driver Logic level translator.cc4. Pinning informationTable 1: Pinning - SOT54, simplified outline and symbolPin Description Simplified outline Symbol1 drain (d)d2 gate (g)3 source (s)g03ab4003ab303 2 1sSOT54 (TO-92 variant) N-channel MOSFET1. TrenchMOS is a trademark of Royal Philips Electronics.2N7000Philips SemiconductorsN-channel enhancement mode field-effect transistor5. Quick reference dataTable 2: Quick reference data

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