View 2n7000 datasheet:

2N7000SEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controlled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTERISTIC SYMBOL RATING UNITK 0.55 MAXF FL 2.30VDSSDrain-Source Voltage 60 VM 0.45 MAXN 1.00VGSSGate-Source Voltage V 1 2 320IDContinuous 5001. SOURCEDrain Current mA2. GATEIDPPulsed(Note 1) 20003. DRAINPDDrain Power Dissipation 625 mWTjJunction Temperature 150TO-92Tstg -55 150Storage Temperature RangeNote 1) Pulse Width 10 , Duty Cycle 1%EQUIVALENT CIRCUITDGSPLEASE HANDLE WITH CAUTION

Keywords - ALL TRANSISTORS DATASHEET

 2n7000.pdf Design, MOSFET, Power

 2n7000.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7000.pdf Database, Innovation, IC, Electricity