View 2n7000 datasheet:

2N7000 Mosfet (N-Channel)TO-921. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V Dimensions in inches and (millimeters)ID Drain Current 200 mA PD Power Dissipation 350 mW Thermal Resistance, junction to Ambient RJA 357 /W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITDrain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10A 60V Gate-Threshold Voltage* Vth(GS) VDS=VGS, ID=1mA 0.8Gate-body Leakage lGSS VDS=0 V, VGS=15 V 10 nA Zero Gate Voltage Drain Current

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