View 2n7000 datasheet:

N-CHANNEL SmaII SignaI MOSFETFEATURESBVDSS = 60 V Fast Switching TimesRDS(on) = 5.0 Improved Inductive Ruggedness Lower Input CapacitanceID = 200 mA Extended Safe Operating Area Improved High Temperature ReliabilityTO-921231.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Current (TC=25 )200IDmAContinuous Drain Current (TC=100 )110IDM Drain Current-Pulsed mA1000VGS Gate-to-Source Voltage 30 VTotal Power Dissipation (TC=25 ) mW400PD Linear Derating Factor3.2 mW/Operating Junction andTJ , TSTG- 55 to +150Storage Temperature RangeMaximum Lead Temp. for SolderingTL300Purposes, 1/8 from case for 5-secondsThermal ResistanceSymbol Characteristic Typ. Max. UnitsR JAJunction-to-Ambient - 312.5 /WN-CHANNELSmaII SignaI MOS

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