All Transistors. Datasheet

 

View 2n7000 datasheet:

2n70002n7000

2N7000200mA,60V,RDS(ON) 6Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-92 DDescriptionES1The 2N7000 is designed for high voltage, highspeed applications such as switching regulators,converters, solenoid and relay drives. b1SEATING PLANECe1beDrainMillimeter MillimeterREF. REF. Min. Max. Min. Max. GateA 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - Sourceb1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum RatingsParameter Symbol Ratings UnitVDrain-Source Voltage 60VDSGate-Source Voltage 20-Continuous VGS V 40-Non-Repetitive (tp 50us) VGSM V Drain Current ID 200 mA-Continuous IDM 500-Pulsed mAPower Dissipation- TA=25o C W0.35PD25o-Derate Above C2.8 mW/ o CoThermal Resistance, Junction-To-Ambi

 

Keywords - ALL TRANSISTORS DATASHEET

 2n7000.pdf Design, MOSFET, Power

 2n7000.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7000.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.