View 2n7000 2n7002 nds7002a datasheet:

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged and reliable. minimize on-state resistance while provide rugged, reliable,and fast switching performance. They can be used in mostHigh saturation current capability.applications requiring up to 400mA DC and can deliverpulsed currents up to 2A. These products are particularlysuited for low voltage, low current applications such as smallservo motor control, power MOSFET gate drivers, and otherswitching applications._________________________________________________________________

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