View 2n7000a datasheet:

2N7000ASEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controolled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25)H 0.45_HJ 14.00 + 0.50CHARACTERISTIC SYMBOL RATING UNITK 0.55 MAXF FL 2.30VDSSDrain-Source Voltage 60 VM 0.45 MAXN 1.00VDGRDrain-Gate Voltage (RGS1) 60 V 1 2 3VGSS 20Gate-Source Voltage V1. SOURCE2. GATEIDContinuous 2003. DRAINDrain Current mAIDPPulsed 500PDDrain Power Dissipation 400 mWTO-92TjJunction Temperature 150Tstg -55150 Storage Temperature RangeEQUIVALENT CIRCUITDGSTHIS TR

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