View 2n7000bu datasheet:

Advanced Small Signal MOSFET 2N7000BU/2N7000TAFEATURESBVDSS = 60 Vn Fast Switching TimesRDS(on) = 5.0 n Improved Inductive Ruggednessn Lower Input CapacitanceID = 200 mAn Extended Safe Operating Arean Improved High Temperature ReliabilityTO-921.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Current (TC=25)200ID mAContinuous Drain Current (TC=100)110IDM Drain Current-Pulsed 1000 mAVGS Gate-to-Source Voltage30 VTotal Power Dissipation (TC=25)400 mWPDLinear Derating Factor3.2 mW/Operating Junction andTJ , TSTG - 55 to +150Storage Temperature RangeMaximum Lead Temp. for SolderingTL 300Purposes, 1/8? from case for 5-secondsThermal ResistanceSymbol Characteristic Typ. Max. UnitsRJA Junction-to-Ambient -- 312.5

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