View 2n7000g datasheet:

2N7000GSmall Signal MOSFET200 mAmps, 60 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified200 mAMPS PPAP Capable60 VOLTS This is a Pb-Free Device*RDS(on) = 5 WN-ChannelMAXIMUM RATINGS DRating Symbol Value UnitDrain Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGGate-Source Voltage- Continuous VGS 20 VdcS- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current mAdc- Continuous ID 200- Pulsed IDM 500TO-92Total Power Dissipation @ TC = 25C PD 350 mW CASE 29Derate above 25C 2.8 mW/CSTYLE 22Operating and Storage Temperature TJ, Tstg -55 to +150 C1Range12233THERMAL CHARACTERISTICSSTRAIGHT LEAD BENT LEADBULK PACK TAPE & REELCharacteristic Symbol Max UnitAMMO PACKThermal Resistance, Junction-to-Ambient RqJA 357 C/WMaximum Lead Temperature for TL 300

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