View 2n7000r3 datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7000/DTMOS FET Transistor2N7000NChannel EnhancementMotorola Preferred Device3 DRAIN2GATE1 SOURCEMAXIMUM RATINGS1Rating Symbol Value Unit23Drain Source Voltage VDSS 60 VdcCASE 2904, STYLE 22DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcTO92 (TO226AA)GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp 50 s) VGSM 40 VpkDrain Current mAdcContinuous ID 200Pulsed IDM 500Total Power Dissipation @ TC = 25C PD 350 mWDerate above 25C 2.8 mW/COperating and Storage Temperature Range TJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient RJA 357 C/WMaximum Lead Temperature for TL 300 CSoldering Purposes, 1/16 from casefor 10 secondsELECTRICAL

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