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View 2n7002 datasheet:

2n70022n7002

N-CHANNEL SmaII SignaI MOSFETFEATURESBVDSS = 60 V Lower Rds(on)RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching TimesID = 115 mA Lower Input Capacitance Extended Safe Operating AreaSOT-23 Improved High Temperature Reliability2131.Gate 2. Drain 3. SourceProduct SummaryPart Number BVdss Rds(on) ID115mA60V2N7002 5.0 Absolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage60 VContinuous Drain Current (TC=25 )115IDmAContinuous Drain Current (TC=100 )73IDM Drain Current-Pulsed mA800VGS Gate-to-Source Voltage 20 VTotal Power Dissipation (TC=25 ) W0.2PD Linear Derating Factor0.16 W/Operating and Junction StorageTJ , TSTG- 55 to +150Temperature RangeThermal ResistanceSymbol Characteristic Typ. Max. UnitsR JAJunction-to-Ambient - 62.5 /WN-CHANNELSmaII SignaI

 

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 2n7002.pdf Design, MOSFET, Power

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