View 2n7002bkt datasheet:

2N7002BKT60 V, 290 mA N-channel Trench MOSFETRev. 1 15 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tamb =25C- - 60 VVGS gate-source voltage Tamb =25C- - 20 V[1]ID drain current Tamb =25C; - - 290 mAVGS =10VRDSon drain-source on-state Tj =25 C; - 1 1.6 resistance VGS =10V; ID = 500 mA[1]

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