View 2n7002k datasheet:

2N7002KN-Channel Enhancement 3 DRAINMode Power MOSFET31P b Lead(Pb)-Free1GATE *2* Gate Pretection DiodeSOURCE 2SOT-23Features:* Low on-resistance.* Fast switching speed.* Low-voltage drive.* Easily designed drive circuits.* Easy to parallel.* Pb-Free package is available.* Esd Protected:2000VMaximum Ratings(T = 25 Unless Otherwise Specified)AParameter Symbol Limits UnitDrain-source voltage VDSS 60 VGate-source voltage VGSS 20 VContinuous ID 115 mADrain current1*Pulsed IDP 0.8 AContinuous IDR 115 mADrain reverse current1*Pulsed IDRP 0.8 A2*PD 225 mWTotal power dissipationChannel temperature Tch 150 CStorage temperature+Tstg -55~ 150 C1. Pw 10s, Duty cycle 1%.2. When mounted on a 10.750.062 inch glass epoxy board.Device Marking 2N7002K = RKWEITRON1/5 02-Mar-10h

Keywords - ALL TRANSISTORS DATASHEET

 2n7002k.pdf Design, MOSFET, Power

 2n7002k.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002k.pdf Database, Innovation, IC, Electricity