View 2n7002ka datasheet:

2N7002KAN-channel TrenchMOS FETRev. 03 25 February 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level compatible Very fast switching Subminiature surface-mounted package Gate-source ElectroStatic Discharge(ESD) protection diodes1.3 Applications Relay driver High-speed line driver1.4 Quick reference data VDS 60 V ID 320 mA RDSon 4.4 Ptot 0.83 W2. Pinning informationTable 1. PinningPin Description Simplified outline Symbol1 gate (G)3 D2 source (S)3 drain (D)G12SOT23 (TO-236AB)S003aac0362N7002KANXP SemiconductorsN-channel TrenchMOS FET3. Ordering informationTable 2. Ordering informationType number PackageName Description Version2N7002KA TO-236AB plastic s

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