View 2n7002kw datasheet:

May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking : 7KWAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 60 VVGSS Gate-Source Voltage 20 VID Maximum Drain Current - Continuous 310 mATJ = 100C 195 mA - Pulsed 1.2 ATJ Operating Junction Temperature Range -55 to +150 CTSTG Storage Temperature Range -55 to +150 C* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.Thermal CharacteristicsSymbol Parameter Va

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