View 2n7002lt1 datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINNChannel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current Continuous TC = 25C(1) ID 115 mAdcDrain Current Continuous TC = 100C(1) ID 75Drain Current Pulsed(2) IDM 800GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp 50 s) VGSM 40 VpkTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR5 Board,(3) TA = 25C PD 225 mWDerate above 25C 1.8 mW/CThermal Resistance, Junction to Ambient RJA 556 C/WTotal Device Dissipation PD 300 mWAlumina Substrate,(4)

Keywords - ALL TRANSISTORS DATASHEET

 2n7002lt1.pdf Design, MOSFET, Power

 2n7002lt1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002lt1.pdf Database, Innovation, IC, Electricity